Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
Features
- Low VDD Use
- Driving Battery
- Low Noise Figure :
- High Power Gain : NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping
PACKAGE DIMENSIONS
: (VDS = 3.5 V)
0.3 +0.1
- 0.05
(Unit: mm)
2.1±0.2 1.25±0.1 2 3 0.3 +0.1
- 0.05 4
- Suitable for uses as RF amplifier in UHF TV tuner.
- Small Package : 4 Pins Super Mini Mold
2.0±0.2 0.65
- Automatically Mounting...