3SK255 - RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

NEC (now Renesas Electronics)

Key Features

Low VDD Use.
Driving Battery.
Low Noise Figure :.
High Power Gain : NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 1.25.

3SK255 rf amplifier for uhf tuner n-channel si dual gate mos field-effect transistor 4 pins super mini mold by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	3SK255
Manufacturer	NEC (now Renesas Electronics)
File Size	54.90 KB
Description	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
Datasheet	3SK255 Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
3SK252	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK253	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK254	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
3SK206	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
3SK222	N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use • Driving Battery • Low Noise Figure : • High Power Gain : NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 1.25 PACKAGE DIMENSIONS : (VDS = 3.5 V) 0.3 +0.1 –0.05 (Unit: mm) 2.1±0.2 1.25±0.1 2 3 0.3 +0.1 –0.05 4 • Suitable for uses as RF amplifier in UHF TV tuner. • Small Package : 4 Pins Super Mini Mold 2.0±0.2 0.