Datasheet4U Logo Datasheet4U.com

NP32N055HDE - N-Channel Power MOSFET

General Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A).
  • Low Ciss : Ciss = 1300 pF TYP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP32N055HHE N-Channel MOSFET Renesas
NP32N055IHE N-Channel MOSFET Renesas
NP32N055SHE N-Channel MOSFET Renesas
NP3007DR 30V P-Channel Enhancement Mode MOSFET natlinear
NP3065D6 30V N-Channel Enhancement Mode MOSFET natlinear

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NP32N055HLE N-Channel Power MOSFET
NP32N055IDE N-Channel Power MOSFET
NP32N055ILE N-Channel Power MOSFET
NP32N055SDE N-Channel Power MOSFET
NP3302MF01 COLOR PLASMA DISPLAY MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design.