NP32N055IHE - N-Channel MOSFET

Renesas

Download the NP32N055IHE datasheet PDF. This datasheet also covers the NP32N055HHE variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A).
Low Ciss : Ciss = 1100 pF TYP.
Built-in gate protection diode.

📥 Download Datasheet

NP32N055IHE n-channel mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NP32N055HHE-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NP32N055IHE
Manufacturer	Renesas
File Size	203.07 KB
Description	N-Channel MOSFET
Datasheet	NP32N055IHE Datasheet

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number	Description
NP32N055HHE	N-Channel MOSFET
NP32N055SHE	N-Channel MOSFET
NP30N04QUK	Dual N-channel Power MOSFET
NP30N06QDK	Dual N-channel Power MOSFET
NP33N075YDF	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A) • Low Ciss : Ciss = 1100 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HHE NP32N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design.