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NP32N055HLE - N-Channel Power MOSFET

General Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A).
  • Low Ciss : Ciss = 1300 pF TYP.
  • Built-in gate protection diode (TO-251) DataShee.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP32N055HLE NP32N055ILE PACKAGE TO-251 TO-252 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. • Built-in gate protection diode (TO-251) DataShee ABSOLUTE MAXIMUM RATINGS (TA = 25°C) DataSheet4U.