UPA1456 Datasheet | NEC

DESCRIPTION The µPA1456 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES MIN. 1.4 0.6 ±0.1 2.54 1.4 0.5 ±0.1 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. - Easy mount by 0.1 inch of terminal interval. - High h FE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 10 2.5 µPA1456H CONNECTION DIAGRAM 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IB(DC) PT1- - PT2- - - Tj 150 100 7 ±5 0.5 3.5 28 150 V V V A/unit A/unit A/unit W W ˚C (B) IC(pulse)- ± 10 (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 (E) . R1 = . 3.0 kΩ . R2 = . 300 Ω Tstg - 55 to +150 ˚C - PW ≤ 300 µs, Duty Cycle ≤ 10 % - - 4 Circuits, Ta = 25 ˚C - - - 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3521 (O. D. No. IC-6340) Date Published September 1994 P Printed in Japan © µPA1456 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO h FE1 h FE2 MIN. TYP. MAX. 10 10 UNIT TEST CONDITIONS VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 2 A VCE = 2 V, IC = 4 A IC = 2 A, IB = 2 m A IC = 2 A, IB = 2 m A IC = 2 A IB1 = - IB2 = 2 m A . 50 V, R L = . 25 Ω VCC = . . See test...