UPA1458 Datasheet | NEC

DESCRIPTION The µPA1458 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES - Surge Absorber (C - B) built in. - Easy mount by 0.1 inch of terminal interval. - High h FE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 0.6 ±0.1 1.4 0.5 ±0.1 µPA1458H 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Surge Sustaining Energy Collector Current (DC) Collector Current (pulse) Collector Current Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO ECEO(sus) IC(DC) ICBS(DC) IB(DC) PT1- - PT2- - - Tj 60 ± 10 60 ± 10 7 25 ±5 5 0.5 3.5 28 150 V V V m J/unit A/unit A/unit m A/unit A/unit W W ˚C (B) (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 . R1 = . 3.0 kΩ . R2 = . 300 Ω IC(pulse)- ± 10 (E) Tstg - 55 to +150 ˚C - PW ≤ 300 µs, Duty Cycle ≤ 10 % - - 4 Circuits, Ta = 25 ˚C - - - 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3523 (O. D. No. IC-6342) Date Published September 1994 P Printed in Japan © 10...