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UPA1730 - P-Channel Power MOSFET

Datasheet Summary

Description

The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

Features

  • Low on-resistance 1.44 RDS(on)1 = 9.5 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 6.5 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 RDS(on)2 = 13.5 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 6.5 A) 5 RDS(on)3 = 15.0 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 6.5 A).
  • Low Ciss : Ciss = 3800 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.

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Datasheet Details

Part number UPA1730
Manufacturer NEC
File Size 71.19 KB
Description P-Channel Power MOSFET
Datasheet download datasheet UPA1730 Datasheet
Additional preview pages of the UPA1730 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1730 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-resistance 1.44 RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5 V, ID = –6.5 A) 5 RDS(on)3 = 15.0 mΩ MAX. (VGS = –4.0 V, ID = –6.5 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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