NEC UPA1730
The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.| Part No. | UPA1730 |
|---|---|
| Datasheet | UPA1730 Download |
| Manufacturer |  NEC |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; DrainFEATURES
● Low on-resistance 1.44 RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5 V, ID = –6.5 A) 5 RDS(on)3 = 15.0 mΩ MAX. (VGS = –4.0 V, ID = –6.5 A)● Low Ciss : Ciss = 3800 pF TYP.
● Built-in G-S protection diode
● Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µ PA1730G
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 V V A A W °C °C Gate Gate Protection Diode # 20 # 13.0 # 52.0 Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 2.2 150 –55 to +150 Source Notes 1.
