Datasheet4U Logo Datasheet4U.com

UPA1700A - SWITCHING N-CHANNEL POWER MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers.

Key Features

  • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A).
  • Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10.
  • 0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 ±0.3 4.4 0.8 Ciss = 820 pF Typ.
  • Built-in G-S Protection Diode.
  • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPA1708G N-Channel 40V MOSFET VBsemi
UPA1572 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE Renesas
UPA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas
UPA1A102MPD ALUMINUM ELECTROLYTIC CAPACITORS Nichicon
UPA1A103MPD ALUMINUM ELECTROLYTIC CAPACITORS Nichicon

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPA1701A SWITCHING N-CHANNEL POWER MOSFET
UPA1703 SWITCHING N-CHANNEL POWER MOSFET
UPA1704 SWITCHING N-CHANNEL POWER MOSFET
UPA1705 N-Channel Power MOSFET
UPA1706 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. 8 PACKAGE DIMENSIONS (in millimeter) 5 FEATURES • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 ±0.3 4.4 0.8 Ciss = 820 pF Typ. • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.