NEC UPA1705
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.| Part No. | UPA1705 |
|---|---|
| Datasheet | UPA1705 Download |
| Manufacturer |  NEC |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; DrainFEATURES
● Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)● Low Ciss : Ciss = 750 pF TYP.
● Built-in G-S protection diode
● Small and surface mount package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1705G
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±25 ±8 ±50 2.0 150 –55 to + 150 V V A A W °C Gate Body Diode Drain EQUIVALENT CIRCUIT Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature °C Gate Protection Diode Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm Remark 2 Source The diode connected between the gate and source of the transistor serves as a protector against ESD.
