Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1705
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook puters.
PACKAGE DRAWING (Unit : mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
Features
- Super low on-state resistance
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
1.8 Max.
1 5.37 Max.
6.0 ±0.3 4.4
+0.10
- 0.05
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
- Low Ciss : Ciss = 750 pF TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max....