Description
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
Features
- Super low on-state resistance
1.44
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
1.8 Max. 1 5.37 Max. 4
6.0 ±0.3 4.4
+0.10.
- 0.05
0.8
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A).
- Low Ciss : Ciss = 750 pF TYP.
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
0.15
0.05 Min. 0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10.
- 0.05.
UPA1705 Datasheet
