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UPA1705 - N-Channel Power MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.

Key Features

  • Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A).
  • Low Ciss : Ciss = 750 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.
  • 0.05.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) • Low Ciss : Ciss = 750 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.