Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1701A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
Features
- 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
- Low Ciss : Ciss = 1040 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 MAX.
1 5.37 MAX.
6.0 ±0.3 4.4
+0.10
- 0.05
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX....