Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
Features
- 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX. ) (VGS = 4.0 V, ID = 3.5 A)
1.44
RDS(on)2 = 40 mΩ (MAX. ) (VGS = 2.5 V, ID = 3.5 A).
- Low Ciss : Ciss = 1040 pF (TYP. ).
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
1.8 MAX. 1 5.37 MAX. 4
6.0 ±0.3 4.4
+0.10.
- 0.05
0.8
0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
- 0.05
0.12 M.
UPA1701A Datasheet
