Datasheet Summary
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1703
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook puters.
8 5
PACKAGE DIMENSIONS
(in millimeter)
Features
- Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
- Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A)
1 4 5.37 MAX.
+0.10
- 0.05
1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
Ciss = 2180 pF TYP.
1.44 1.8 MAX.
6.0 ±0.3 4.4 0.8
- Built-in G-S Protection Diode
- Small and Surface Mount Package (Power SOP8)
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
0.12...