UPA1703
Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook puters. 8 5 PACKAGE DIMENSIONS (in millimeter).
Key Features
- Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
- Built-in G-S Protection Diode
