UPA1703 Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook puters. 8 5 PACKAGE DIMENSIONS (in millimeter).
UPA1703 Key Features
- Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
- Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A)
- Built-in G-S Protection Diode
- Small and Surface Mount Package (Power SOP8)