Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.
Features
- Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ.
- Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A)
1 4 5.37 MAX. +0.10.
- 0.05
1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 ±0.3 4.4 0.8.
- Built-in G-S Protection Diode.
- Small and Surface Mount Package (Power SOP8)
0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
- 0.05
0.12 M.
UPA1703 Datasheet
