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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1703
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.
8 5
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ • Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A)
1 4 5.37 MAX.
+0.10 –0.05
1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
Ciss = 2180 pF TYP.
1.44 1.8 MAX.
6.0 ±0.3 4.4 0.8
• Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.