Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1708
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.
PACKAGE DRAWINGS (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
Features
- Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
1 5.37 MAX.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A)
- Low Ciss : Ciss = 730 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 MAX.
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
0.12 M
ORDERING...
