Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1706
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
PACKAGE DRAWING (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
Features
- Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)
1 5.37 MAX.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A)
- Low Ciss : Ciss = 3000 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8...