Description
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
Features
- Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP. ) (VGS = 10 V, ID = 7.0 A)
1.44
1 5.37 MAX. +0.10.
- 0.05
4
6.0 ±0.3 4.4 0.8
RDS(on)2 = 7.0 mΩ (TYP. ) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP. ) (VGS = 4.0 V, ID = 7.0 A).
- Low Ciss : Ciss = 3000 pF (TYP. ).
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
1.8 MAX. 0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
- 0.05
0.12 M.
UPA1706 Datasheet
