UPA1706 Description
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. 8 PACKAGE DRAWING (Unit.
UPA1706 Key Features
- Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)
- Low Ciss : Ciss = 3000 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)