Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1740TP
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9 : Drain
SWITCHING N-CHANNEL POWER MOS FET
The µPA1740TP is N-channel MOS FET device that Features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. ..
DESCRIPTION
Features
- High voltage: VDSS = 200 V
- Gate voltage rating: ±30 V
- Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)
- Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V)
- Built-in gate protection diode
- Small and surface mount package (Power HSOP8)
- Avalanche...