Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1740TP
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9 : Drain
SWITCHING N-CHANNEL POWER MOS FET
The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. www.DataSheet4U.com
DESCRIPTION
FEATURES
• High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and surface mount package (Power HSOP8) • Avalanche capability rated
1.49 ±0.21 1.44 TYP.
1 5.2 +0.17 –0.2 4 0.8 ±0.2 S
+0.10 –0.05
6.0 ±0.3 4.4 ±0.15
0.05 ±0.