Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1741TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain
The µPA1741TP is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
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Features
- High voltage: VDSS = 250 V
- Gate voltage rating: ±30 V
- Low on-state resistance RDS(on) = 0.79 Ω MAX. (VGS = 10 V, ID = 2.5 A)
- Low input capacitance Ciss = 340 pF TYP. (VDS = 10 V, VGS = 0 V)
- Built-in gate protection diode
- Small and surface mount package (Power HSOP8)
1.49 ±0.21 1.44...