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UPA2711GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

General Description

The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

Key Features

  • Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 6.5 A).
  • Low Ciss: Ciss = 2450 pF TYP.
  • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 +0.10.
  • 0.05 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10.

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Full PDF Text Transcription for UPA2711GR (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain DESCRIPTIO...

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(Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain DESCRIPTION The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS = −4.0 V, ID = −6.5 A) • Low Ciss: Ciss = 2450 pF TYP. • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 +0.10 –0.05 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP