UPA2718GR
Description
The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
Key Features
- Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = -10 V, ID = -6.5 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = -4.5 V, ID = -6.5 A)
- Low Ciss: Ciss = 2810 pF TYP.
- Built-in gate protection diode
- Small and surface mount package (Power SOP8)
- 0 ±0.3 4.4 +0.10 -0.05 1
- 44 4 5.37 MAX.
- 8 MAX.
