UPA2713GR
Description
The µPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain.
Key Features
- Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = -10 V, ID = -4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = -4.5 V, ID = -4.0 A) RDS(on)3 = 30 mΩ MAX. (VGS = -4.0 V, ID = -4.0 A)
- Low Ciss: Ciss = 1600 pF TYP.
- Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 -0.05
- 0 ±0.3 4.4 0.8
- 8 MAX.
- 05 MIN.
- 5 ±0.2 0.10
