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UPA2716GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

Features

  • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 7.0 A).
  • Low Ciss: Ciss = 3000 pF TYP.
  • Built-in gate protection diode.
  • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10.
  • 0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.05 MIN.

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Datasheet Details

Part number UPA2716GR
Manufacturer NEC
File Size 149.48 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2716GR Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS = –4.5 V, ID = –7.0 A) • Low Ciss: Ciss = 3000 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.05 MIN. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.15 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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