UPA2716GR
Description
The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain.
Key Features
- Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = -10 V, ID = -7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS = -4.5 V, ID = -7.0 A)
- Low Ciss: Ciss = 3000 pF TYP.
- Built-in gate protection diode
- Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 -0.05
- 0 ±0.3 4.4 0.8
- 8 MAX.
- 05 MIN.
