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UPA2716GR Datasheet

Manufacturer: NEC (now Renesas Electronics)

UPA2716GR datasheet preview

Datasheet Details

Part number	UPA2716GR
Datasheet	UPA2716GR_NEC.pdf
File Size	149.48 KB
Manufacturer	NEC (now Renesas Electronics)
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET

UPA2716GR Overview

The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.

UPA2716GR Key Features

Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = -10 V, ID = -7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS = -4.5 V, ID = -7
Low Ciss: Ciss = 3000 pF TYP
Built-in gate protection diode
Small and surface mount package (Power SOP8)

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