UPA807T
UPA807T is NPN Transistor manufactured by NEC.
DATA SHEET
SILICON TRANSISTOR
µPA807T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
Features
- Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
- A Super Mini Mold Package Adopted
- Built-in 2 Transistors (2 × 2SC5179)
2.0±0.2
PACKAGE DRAWINGS (Unit: mm)
2.1±0.1 1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
µPA807T µPA807T-T1
0.9±0.1...
