UPA808T Description
DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD.
UPA808T Key Features
- Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
- A Super Mini Mold Package Adopted
- Built-in 2 Transistors (2 × 2SC5184)