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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA809T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1 1.25±0.1
0.65 0.65
1.3
IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5193)
2.0±0.2
2
3
0.9±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.
UPA809T Datasheet
