Datasheet4U Logo Datasheet4U.com

UPA811T Datasheet High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.

Key Features

  • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA.
  • A Small Mini Mold Package Adopted.
  • Built-in 2 Transistors (2 × 2SC4228) 2.0±0.2 2 3.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPA810TC NPN SILICON EPITAXIAL TRANSISTOR
UPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA813T NPN SILICON EPITAXIAL TRANSISTOR
UPA814TC NPN SILICON RF TWIN TRANSISTOR
UPA814TF NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA800T NPN Transistor
UPA800TF NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA801TC NPN Transistor
UPA802T NPN Transistor
UPA803T NPN Transistor

UPA811T Distributor