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UPA811T - HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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NEC

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UPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – UPA811T

Datasheet Details

Part number	UPA811T
Manufacturer	NEC
File Size	49.15 KB
Description	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA811T Datasheet
Additional preview pages of the UPA811T datasheet.

Product details

Features

Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA.
A Small Mini Mold Package Adopted.
Built-in 2 Transistors (2 × 2SC4228) 2.0±0.2 2 3.

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Published: Apr 17, 2005 |