UPA812T Description
PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
UPA812T Key Features
- Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
- High Gain
- A Small Mini Mold Package Adopted
- Built-in 2 Transistors (2 × 2SC4227)