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UPA813T - NPN SILICON EPITAXIAL TRANSISTOR

Key Features

  • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.0±0.2 Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz).
  • A Surface Mounting Package Adopted.
  • Built-in 2 Transistors (2 × 2SC4570) 1.3 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.0±0.2 Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors (2 × 2SC4570) 1.3 2 3 ORDERING INFORMATION 0.9±0.1 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.