UPD46128512-X Description
The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function. The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.
UPD46128512-X Key Features
- 8,388,608 words by 16 bits organization
- Asynchronous page read mode
- Synchronous read and write mode
- Burst length: 8 words / 16 words / continuous
- Clock latency: 5, 6, 7, 8, 9, 10
- Burst sequence: Linear burst
- Max clock frequency: 108/83 MHz
- Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)
- Low voltage operation: 1.7 to 2.0 V
- Operating ambient temperature: TA = -30 to +85 °C