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UPD46128512-X - 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

General Description

The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.

Key Features

  • 8,388,608 words by 16 bits organization.
  • Asynchronous page read mode.
  • Synchronous read and write mode.
  • Burst length: 8 words / 16 words / continuous.
  • Clock latency: 5, 6, 7, 8, 9, 10.
  • Burst sequence: Linear burst.
  • Max clock frequency: 108/83 MHz.
  • Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15).
  • Low voltage operation: 1.7 to 2.0 V.
  • Operating ambient temperature: TA =.
  • 30 to +85 °C.
  • C.

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Full PDF Text Transcription (Reference)

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT μPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function. The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.