Datasheet Summary
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4616112-X
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM patible function and pin configuration. The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112-X is packed in 48-pin TAPE FBGA.
Features
- 1,048,576 words by 16 bits organization
- Fast access time: 85, 95 ns (MAX.)
- Byte data control: /LB (I/O0
- I/O7), /UB (I/O8
- I/O15)
- Low voltage operation: VCC = 2.6 to 3.1 V
- Operating ambient...