Datasheet4U Logo Datasheet4U.com

UPD4616112-X - 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

General Description

The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell.

Key Features

  • 1,048,576 words by 16 bits organization.
  • Fast access time: 85, 95 ns (MAX. ).
  • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15).
  • Low voltage operation: VCC = 2.6 to 3.1 V.
  • Operating ambient temperature: TA =.
  • 25 to +85 °C.
  • Output Enable input for easy.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
uPD46184095B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Renesas
uPD46184182B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION Renesas
uPD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION Renesas
uPD46184185B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Renesas
uPD46184362B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128953-X 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
UPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112-X is packed in 48-pin TAPE FBGA. Features • 1,048,576 words by 16 bits organization • Fast access time: 85, 95 ns (MAX.) • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) • Low voltage operation: VCC = 2.6 to 3.