Datasheet Summary
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4616112
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
Description
The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM patible function and pin configuration. The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112 is packed in 48-pin TAPE FBGA.
Features
- 1,048,576 words by 16 bits organization
- Fast access time: 80, 90 ns (MAX.)
- Byte data control: /LB (I/O0
- I/O7), /UB (I/O8
- I/O15)
- Low voltage operation: VCC = 2.6 to 3.0 V
- Operating ambient temperature: TA =
- 20 to +70 °C
- Output...