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UPD4616112 - 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT

General Description

The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell.

Key Features

  • 1,048,576 words by 16 bits organization 5.
  • Fast access time: 80, 90 ns (MAX. ).
  • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15).
  • Low voltage operation: VCC = 2.6 to 3.0 V.
  • Operating ambient temperature: TA =.
  • 20 to +70 °C.
  • Output Enable input for easy.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT Description The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112 is packed in 48-pin TAPE FBGA. Features • 1,048,576 words by 16 bits organization 5 • Fast access time: 80, 90 ns (MAX.) • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) • Low voltage operation: VCC = 2.6 to 3.