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UPD46128953-X - 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION

General Description

The μPD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile Specified RAM featuring synchronous burst read and synchronous burst write function.

Key Features

  • 4,194,304 words by 32 bits organization.
  • Low voltage operation: 1.7 to 2.0 V (1.85±0.15 V).
  • Operating ambient temperature: TA =.
  • 25 to +85 °C.
  • Synchronous burst mode Burst length : 8 double words (Wrap) Burst sequence : Linear burst Maximum clock frequency : 83 / 66 MHz.
  • SDR (Single Data Rate) Architecture One data transfers per one clock cycle All inputs/outputs are synchronized with the positive edge of the clock.
  • Write data mask (.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT μPD46128953-X 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION Description The μPD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile Specified RAM featuring synchronous burst read and synchronous burst write function. The μPD46128953-X realizes high performance with the SDR interface, command and data inputs / outputs are synchronized the rising edge of clock. The μPD46128953-X is fabricated with advanced CMOS technology using one-transistor memory cell. Features • 4,194,304 words by 32 bits organization • Low voltage operation: 1.7 to 2.0 V (1.85±0.