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P1006BD - N-Channel Enhancement Mode Field Effect Transistor

Download the P1006BD datasheet PDF. This datasheet also covers the P1006BD-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P1006BD-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P1006BD
Manufacturer NIKO-SEM
File Size 346.98 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P1006BD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
P1006BD N-Channel Transistor UNIKC
P1006BI N-Channel MOSFET UNIKC
P1006BIS MOSFET UNIKC
P1006BK MOSFET UNIKC
P1006BT N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P1006BK N-Channel MOSFET
P1006BT N-Channel Transistor
P1006BTF N-Channel Transistor
P1003BKA N-Channel FET
P1004BD N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P1006BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 66A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature.