NJS KSD5060
Silicon NPN Power Transistor
| Part No. | KSD5060 |
|---|---|
| Datasheet | KSD5060 Download |
| Manufacturer |  NJS |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V(Min)● High Switching Speed
● High Reliability
● Built-in Damper Diode
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature 10 A 80 W 150●c Tstg Storage Temperature Range -55-150 r !I1|
● 2* 2 10M -
● l^V V JX 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PN package ?*-— B.—*● -*. C--
●—-j^. ] tL "H K ~»~°
●●— j -*» --R mm DIM MIN MAX A 19.90 20.10 B 15.50 15.70 C 4.70 4.90 D 0.90 1.10 E 1.90' 2.10 F 3.40 3.60 G 2.90 3.10 H 3.20 3.40 J 0.595 0.805 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 Q 4.90 5.10 R 3.35 3.45 S 1.995 2.005 U 5.90 6.10 Y 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
