High Breakdown Voltage-
: VCBO= 1500V(Min)
High Switching Speed
High Reliability
Built-in Damper Diode
APPLICATIONS
Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collec
Full PDF Text Transcription for KSD5060 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSD5060. For precise diagrams, and layout, please refer to the original PDF.
-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 10 ducts., Una. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973)376-8960 KSD5060 DESC...
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ELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973)376-8960 KSD5060 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V(Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature 10 A 80 W 150 •c Tstg Storage Temperature Range -55-150 r !I1| • 2* 2 10M - •
KSD5060 Datasheet
