NJS KSD5065
Silicon NPN Power Transistor
| Part No. | KSD5065 |
|---|---|
| Datasheet | KSD5065 Download |
| Manufacturer |  NJS |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● High Breakdown Voltage- :VCBo=1500V(Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25t:) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 10 A 80 W 150 'C -55-150●c !111 ' 23 2
●^3 PIN 1. BASE 2. COLLECTOR 3. EMITTER TO-3PN package — L*h B —»● Utl. - c -*—S *r t -^F -
●
● -I ^ , H t fC ^"° mm DIM MIN MAX A 19.90 20,10 B 15.50 15.70 C 4.70 4.90 D 0.90 1.10 E 1.90 2.10 F 3.40 3.60 G 2.90 3.10 H 3.20 3.40 J 0.595 O.S05 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 Q 4.90 5.10 R 3.35 3.45 S 1.995 2.005 U 5.90 ij.10 Y 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press.
