High Breakdown Voltage-
:VCBo=1500V(Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25t:)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
C
Full PDF Text Transcription for KSD5065 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSD5065. For precise diagrams, and layout, please refer to the original PDF.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5065 DESCRIPTION • H...
View more extracted text
X: (973) 376-8960 Silicon NPN Power Transistor KSD5065 DESCRIPTION • High Breakdown Voltage- :VCBo=1500V(Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 10 A 80 W 150 'C -55-150 •c !111 ' 23 2 •^3 PIN 1. BASE 2. COLLECTOR 3.
KSD5065 Datasheet
