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KSD5062 Datasheet PDF

NJS KSD5062

Silicon NPN Power Transistor

Part No. KSD5062
Datasheet KSD5062 Download
Manufacturer
NJS
Description Silicon NPN Power Transistor
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KSD5062 datasheet page 1 preview

DESCRIPTION

● High Breakdown Voltage- : VCBO= 1500V (Min)
● High Switching Speed
● High Reliability
● Built-in Damper Diode

APPLICATIONS

● Designed for color TV horizontal output applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A 120 W 150
●c Tstg Storage Temperature Range -55-150 'C 1|1I1
● 2a 2 nirM 1 I—VA—4—I 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PN package «»● c
●*- M.-'v-"-* *-s h _^,
●uQif/ >,tU[ ** ,1 H 1; i*-
●»;'.' 0 * .:●*-!_ *-*-j ^.-●-o -.-». *~R *~N-» mm DIM MIN MAX A 19.90 20.10 B 15.50 15.70 C 4.70 4.90 D 0.90 1.10 E 1.90 2.10 F 3.40 3.60 G 2.90 3.10 H 3.20 3.40 J 0.595 0.605 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 Q 4.90 5.10 R 3.35 3.45 S 1.995 2.005 U 5.90 6.10 Y 9,90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
KSD5062 page 2 preview