High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO
Full PDF Text Transcription for KSD5064 (Reference)
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KSD5064. For precise diagrams, and layout, please refer to the original PDF.
J.E.IS.E. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5064 DESC...
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227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5064 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 10 A 80 W 150 "C Tstg Storage Temperature Range -55-150 "C !|1 - 23 «-—8 —- / 1 •H f t; 2 •^ 3 PIN 1
KSD5064 Datasheet
