High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode
APPLICATIONS
Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Colle
Full PDF Text Transcription for KSD5061 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSD5061. For precise diagrams, and layout, please refer to the original PDF.
PHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5061 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.