NJS KSD5061
Silicon NPN Power Transistor
| Part No. | KSD5061 |
|---|---|
| Datasheet | KSD5061 Download |
| Manufacturer |  NJS |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
● Built-in Damper Diode
APPLICATIONS
● Designed for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature 10 A 80 W 150●c Tstg Storage Temperature Range -55-150 'C 11! 1 12 3 2 1^i} ! VA * 1 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PN package c -*- !*— 8
●* -●«- .uiLrr>-F^ *-s \ fuQil r~—^\ A T ' E J Lli\Y'"--"^ I *L^_ "I Hr K r -Y , G
●*""●«- L -●●-J * ~-R mm DIM MIN MAX A 19.90 20.10 B 15.50 15.70 C 4,70 4.90 D 0,90 1.10 E 1.90 2.10 F 3.40 3.60 G 2.90 3.10 H 3.20 3.40 J 0.595 0.605 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 Cl 4.90 5.10 R 3.35 3.45 S 1.995 2.005 u 5,90 6.10 Y 9.90 10,10 -»*-D *-N-» NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
