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KSD5061 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Colle

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Datasheet Details

Part number KSD5061
Manufacturer NJS
File Size 63.77 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5061 Datasheet

Full PDF Text Transcription for KSD5061 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KSD5061. For precise diagrams, and layout, please refer to the original PDF.

Jsiizu ^smi-donauctoi LProaueti, Una. Cx t_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Po...

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PHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5061 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.