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NSD2621C - Half-bridge GaN Driver

Download the NSD2621C datasheet PDF. This datasheet also covers the NSD2621A variant, as both devices belong to the same half-bridge gan driver family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (NSD2621A-NOVOSENSE.pdf) that lists specifications for multiple related part numbers.

General Description

7.1.

OVERVIEW10 7.2.

UNDER VOLTAGE LOCK OUT (UVLO)10 7.3.

Overview

NSD2621X Half-bridge GaN Driver Datasheet (EN) 1.3 Product Overview NSD2621X is an integrated half-bridge gate driver which is designed for GaN HEMT.

The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep GaN FET safe.

The undervoltage lock-out (UVLO) protection feature is provided in low side and high side drivers to prevent the GaN FET from operating in low efficiency or dangerous conditions The programmable dead-time control function has been provided.

The adjustable dead-time range is from 20ns to 100ns.

The device operates in the industrial temperature range, -40°C to 125°C, and is available in a compact 4.0 x 4.0 mm QFN package.

Key Features

  • 700V Half-bridge Gate Drivers.
  • Integrated High-side and Low-side Output Regulators.
  • UVLO protection on low side and high side.
  • Source/Sink Current: 2A/ 4A.
  • Propagation Delay: 30ns TYP.
  • Short switching delay and mismatch.
  • Independent turn-on and turn-off adjustable.
  • Programmable Deadtime from 20ns to 100ns.
  • Allowable SW slew rate: 150V/ns.
  • Operating Temperature: -40~125°C.
  • RoHS & REACH Compliance.
  • Lead-free component, suitable for lead-.

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