NSD2621A Description
NSD2621X Half-bridge GaN Driver Datasheet (EN) 1.3 Product Overview NSD2621X is an integrated half-bridge gate driver which is designed for GaN HEMT. The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep GaN FET safe. The undervoltage lock-out (UVLO) protection.
NSD2621A Key Features
- 700V Half-bridge Gate Drivers
- Integrated High-side and Low-side Output Regulators
- UVLO protection on low side and high side
- Source/Sink Current: 2A/ 4A
- Propagation Delay: 30ns TYP
- Short switching delay and mismatch
- Independent turn-on and turn-off adjustable
- Programmable Deadtime from 20ns to 100ns
- Allowable SW slew rate: 150V/ns
- Operating Temperature: -40~125°C