NSD2621A Datasheet | NOVOSENSE

Overview NSD2621X is an integrated half-bridge gate driver which is designed for Ga N HEMT. The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep Ga N FET safe. The undervoltage lock-out (UVLO) protection feature is provided in low side and high side drivers to prevent the Ga N FET from operating in low efficiency or dangerous conditions The programmable dead-time control function has been provided. The adjustable dead-time range is from 20ns to 100ns. The device operates in the industrial temperature range, -40°C to 125°C, and is available in a pact 4.0 x 4.0 mm QFN package. Key Features - 700V Half-bridge Gate Drivers - Integrated High-side and Low-side Output Regulators - UVLO protection on low side and high side - Source/Sink Current: 2A/ 4A - Propagation Delay: 30ns TYP - Short switching delay and mismatch - Independent turn-on and turn-off adjustable - Programmable Deadtime from 20ns to 100ns - Allowable SW slew rate: 150V/ns - Operating Temperature: -40~125°C - Ro HS & REACH pliance - Lead-free ponent, suitable for lead-free soldering profile: 260°C Applications - Driving Ga N power FET used in Half-bridge, fullbridge, active flyback or forward, LLC DC-DC converter - PFC and AC-DC converter - Industrial Inverters and Motor Drives Device Information Part Number NSD2621A- DQAGR NSD2621CDQAGR Output 6V 5V Body Size 4.0mm x 4.0mm x 0.55mm 4.0mm x 4.0mm x 0.55mm Functional Block Diagram VDD EN HI LI DT SGND Regulator UVLO DEMOD Driver Logic EN and DT Logic Control Regulator UVLO...