• Part: MJE172
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 63.46 KB
Download MJE172 Datasheet PDF
NTE Electronics
MJE172
Description : The MJE172 is a silicon PNP transistor in a TO- 126 type package designed for low power audio amplifier and low- current, high- speed switching applications. Features : D Collector- Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: h FE = 30 (Min) @ IC = 0.5A h FE = 12 (Min) @ IC = 1.5A D Current- Gain- Bandwidth Product: f T = 50MHz (Min) @ IC = 100m A D Annular Construction for Low Leakage: ICBO = 100n A (Max) @ VCB = 100V Absolute Maximum Ratings: Collector- Base Voltage, VCB - - - - - - - - - - - . 100V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 80V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 7V Collector Current, IC Continuous - - - - - -...