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MJE172 - Silicon PNP Transistor

General Description

The MJE172 is a silicon PNP transistor in a TO 126 type package designed for low power audio amplifier and low current, high

speed switching applications.

Key Features

  • D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current.
  • Gain.
  • Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Max) @ VCB = 100V Absolute Maximum Ratings: Collector.
  • Base Voltage, VCB.
  • . 100V Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number MJE172
Manufacturer NTE Electronics (defunct)
File Size 63.46 KB
Description Silicon PNP Transistor
Datasheet download datasheet MJE172 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE172 Silicon PNP Transistor Low Power Audio Amp TO−126 Type Package Description: The MJE172 is a silicon PNP transistor in a TO−126 type package designed for low power audio amplifier and low−current, high−speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current−Gain—Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Max) @ VCB = 100V Absolute Maximum Ratings: Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .