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NTE2382 - N-CHANNEL MOSFET

Description

The NTE2382 is a MOS power N

Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain.
  • Source Voltage (Note 1), VDSS.
  • . . . 100V Drain.
  • Gate Voltage (RGS = 1MΩ, Note 1), VDGR.
  • . . . 100V G.

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Datasheet Details

Part number NTE2382
Manufacturer NTE Electronics (defunct)
File Size 26.03 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet NTE2382 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch (Compl to NTE2383) Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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