NTE2383 Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Height: 15.494 mm
Description
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain–Source Voltage (Note 1), VDSS.
Key Features
- 100V Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR
- 100V Gate–Source Voltage, VGS
- ±20V Continuous Drain Current, ID TC = +25°C
- 7.5A Drain Current, Pulsed (Note 3), IDM
- 42A Gate Current, Pulsed, IGM
- ±1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS
- 510mJ Avalanche Current, IAS
- 10.5A Total Power Dissipation (TC = +25°C), PD
- 75W Derate Above 25°C
