• Part: NTE2383
  • Manufacturer: NTE Electronics
  • Size: 25.96 KB
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NTE2383 Description

The NTE2383 is a MOS power P Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

NTE2383 Key Features

  • 100V Drain-Gate Voltage (RGS = 1MΩ, Note 1), VDGR
  • 100V Gate-Source Voltage, VGS
  • ±20V Continuous Drain Current, ID TC = +25°C
  • 10.5A TC = +100°C
  • 7.5A Drain Current, Pulsed (Note 3), IDM
  • 42A Gate Current, Pulsed, IGM
  • ±1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS
  • 510mJ Avalanche Current, IAS
  • 10.5A Total Power Dissipation (TC = +25°C), PD
  • 75W Derate Above 25°C