NTE2386 Datasheet | NTE Electronics

Description : The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Features : - Repetitive Avalanche Ratings - Dynamic dv/dt Rating - Simple Drive Requirements - Ease of Paralleling Absolute Maximum Ratings: Continuous Drain Current, ID (TC = +25°C) - - - - - - - - - - - - . . . 6.2A (TC = +100°C) - - - - - - - - - - - - . . 2.8A Pulsed Drain Current (Note 1), IDM - - - - - - - - - - . 25A Maximum Power Dissipation (TC = +25°C), PD - - - - - - - . . . . 125W (Derate linearly above +25°C) - - - - - - - - - 1.0W/°C Gate- to- Source Voltage, VGS - - - - - - - - - - . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS - - -...