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NTE2380 Datasheet Complementary Silicon Gate MOSFET

Manufacturer: NTE Electronics (defunct)

Overview: NTE2380 (N–Ch) & NTE2381 (P–Ch) plementary Silicon Gate MOSFETs Enhancement Mode, High Speed.

Datasheet Details

Part number NTE2380
Manufacturer NTE Electronics (defunct)
File Size 29.59 KB
Description Complementary Silicon Gate MOSFET
Datasheet NTE2380_NTEElectronics.pdf

General Description

: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are plementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Key Features

  • D Silicon Gate for Fast Switching Speeds D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 1MΩ), VDGR.
  • 500V Gate.
  • Source Volta.

More Datasheets from NTE Electronics (defunct)

Part Number Description
NTE238 Silicon NPN Transistor
NTE2381 Complementary Silicon Gate MOSFETs
NTE2382 N-CHANNEL MOSFET
NTE2383 P-CHANNEL MOSFET
NTE2384 N-CHANNEL MOSFET
NTE2385 N-CHANNEL MOSFET
NTE2386 N-CHANNEL MOSFET
NTE2387 N-CHANNEL MOSFET
NTE2388 N-CHANNEL MOSFET
NTE2389 N-CHANNEL MOSFET

NTE2380 Distributor