NTE2380 Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Height: 6.35 mm
Description
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Rugged – SOA is Power Dissipation Limited D Source–to–Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain–Source Voltage, VDSS.
Key Features
- 500V Drain–Gate Voltage (RGS = 1MΩ), VDGR
- 500V Gate–Source Voltage, VGS
- ±20V Drain Current, ID Continuous NTE2380
- 2.0A Pulsed NTE2380
- 8A Total Power Dissipation (TC = +25°C), PD NTE2380
- 40W Derate Above 25°C
