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NTE2380 - Complementary Silicon Gate MOSFET

Description

The NTE2380 (N Ch) and NTE2381 (P

Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Silicon Gate for Fast Switching Speeds D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 1MΩ), VDGR.
  • 500V Gate.
  • Source Volta.

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Datasheet Details

Part number NTE2380
Manufacturer NTE Electronics (defunct)
File Size 29.59 KB
Description Complementary Silicon Gate MOSFET
Datasheet download datasheet NTE2380 Datasheet

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2380 (N–Ch) & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Rugged – SOA is Power Dissipation Limited D Source–to–Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain–Gate Voltage (RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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