NTE2380 Description
The NTE2380 (N Ch) and NTE2381 (P Ch) are plementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.
NTE2380 Key Features
- SOA is Power Dissipation Limited D Source-to-Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Rat
- 500V Drain-Gate Voltage (RGS = 1MΩ), VDGR
- 500V Gate-Source Voltage, VGS
- ±20V Drain Current, ID Continuous NTE2380
- 2.5A NTE2381
- 2.0A Pulsed NTE2380
- 10A NTE2381
- 8A Total Power Dissipation (TC = +25°C), PD NTE2380
- 40W Derate Above 25°C
- 0.32W/°C NTE2381