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NTE273 - Silicon Darlington Complementary

This page provides the datasheet information for the NTE273, a member of the NTE272 Silicon Darlington Complementary family.

Datasheet Summary

Description

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features

  • D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector.
  • Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector.
  • Emitter Voltage (Note 2), VCEO.
  • . 40V Collector.
  • Emitter Voltage, VCES.

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Datasheet preview – NTE273

Datasheet Details

Part number NTE273
Manufacturer NTE
File Size 22.39 KB
Description Silicon Darlington Complementary
Datasheet download datasheet NTE273 Datasheet
Additional preview pages of the NTE273 datasheet.

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Full PDF Text Transcription

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NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector–Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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