NTE3081 Datasheet | NTE Electronics

Description : The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing patible with dual- in- line packages. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak - - - - - - - - - - - - - . . . . 6000V RMS - - - - - - - - - - - - - - 4242V Steady- State Isolation Voltage (Input to Output), VISO Peak - - - - - - - - - - - - - . . . . 4500V RMS - - - - - - - - - - - - - - 3200V Operating Temperature Range, TJ - - - - - - - - . . . - 55° to +85°C Storage Temperature Range, Tstg - - - - - - - - . . . - 55° to +85°C Lead Temperature (During Soldering, 5sec Max),...