NTE3081 Description
The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing patible with dual in line packages. (TA = +25°C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak . 4242V Steady State Isolation Voltage (Input to Output), VISO Peak.