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NTE3085 - Optoisolator

General Description

The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector.

free control of low AC and DC analog signals.

Key Features

  • As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP.
  • P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD.
  • . 150mW Derate.

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Datasheet Details

Part number NTE3085
Manufacturer NTE Electronics (defunct)
File Size 24.51 KB
Description Optoisolator
Datasheet download datasheet NTE3085 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE3085 Optoisolator Photon Coupled Bilateral Analog FET Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals. Features: As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP–P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . .