NTE3085 Datasheet | NTE Electronics

Description : The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion- free control of low AC and DC analog signals. Features : As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15p F Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP- P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD - - - - - - - - - . 150m W Derate Above 25°C - - - - - - - - - - . . . 2.0m W/°C Forward Current, IF Continuous - - - - - - - - - - - - . . . . 60m A Peak (Pulse Width 100µs, 100pps) - - - - - - - - . . 500m A Peak (Pulse Width 1µs, 300pps) - - - - - - - - - . . . 3A Reverse Voltage, VR - - - - - - - - - - - - - 6V Photo Detector Power Dissipation (TA = +25°C), PD - - -...