The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTE3082 Optoisolator NPN Darlington Transistor Output
Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6000V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4242V Steady–State Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . .
NTE3082 Datasheet
