NTE3083 Datasheet | NTE Electronics

Description : The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo- darlington in a 6- Lead DIP type package. Features : D High Sensitivity: 1m A on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012Ω, 0.5p F Absolute Maximum Ratings: Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Operating Temperature Range, Topr - - - - - - - - - 55° to +100°C Lead Temperature (During Soldering, 10sec), TL - - - - - - - . +260°C Total Power Dissipation (TA = +25°C), PD - - - - - - - - . . 250m W Derate Linearly to 100°C - - - - - - - - - . . . 3.3m W/°C Input to Output Isolation Voltage (1sec), VISOL - - - - - - - . 3550VDC Input Diode Forward Current, IF - - - - - - - - - - - - . . . 60m A Reverse Voltage, VR - - - - - - -...