Click to expand full text
NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W
Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: D Designed for UHF Military and Commercial Equipment D 4W (Min) with Greater than 8dB Gain D Withstands Infinite VSWR Under Operating Conditions D Low Inductance Stripline Package D Emitter Stabilized Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE363 Datasheet
