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NTE366 - Silicon NPN Transistor

Description

The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large

signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features

  • D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 25 Watts Minimum Gain = 6.2dB Efficiency = 60% D Characterized with Series Equivalent Large.
  • Signal Impedance Parameters D Built.
  • In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16.
  • volt High Line and Overdrive Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number NTE366
Manufacturer NTE
File Size 22.05 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE366 Datasheet
Additional preview pages of the NTE366 datasheet.

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Full PDF Text Transcription

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NTE366 Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz Description: The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 25 Watts Minimum Gain = 6.2dB Efficiency = 60% D Characterized with Series Equivalent Large–Signal Impedance Parameters D Built–In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line and Overdrive Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . .
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