• Part: NTE365
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 20.31 KB
Download NTE365 Datasheet PDF
NTE Electronics
NTE365
NTE365 is Silicon NPN Transistor manufactured by NTE Electronics.
Description : The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large- signal amplifier applications in industrial and mercial FM equipment operating to 512MHz. Features : D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 15 Watts Minimum Gain = 7.8d B Efficiency = 55% D Characterized with Series Equivalent Large- Signal Impedance Parameters D Built- In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16- volt High Line and Overdrive Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 16V Collector- Base Voltage, VCBO - - - - - - - - - - - 36V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Collector Current- Continuous, IC - - - - - - - - - - . . . . 3A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . . 50W Derate above 25°C - - - - - - - - - - . . . 250m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Thermal Resistance, Junction- to- Case, Rth JC -...